smd type ic smd type mosfet features ultra low on-resistance n-channel mosfet low profile (<1.1mm) available in tape and reel fast switching absolute maximum ratings ta = 25 parameter symbol rating unit drain- source voltage v ds 20 v gate-to-source voltage v gs 12 v continuous drain curent,v gs @4.5v i d 4.2 a pulsed drain current i dm 33 a power dissipation p d 1.25 w linear derating factor 0.01 w junction-to-ambient * r ja 75 /w junction and storage temperature range t j ,t stg -55to+150 * surface mounted on fr-4 board,t 5sec. 1. gate 2. source 3. drain 0.4 +0.1 -0.05 2.9 +0.2 -0.2 0.95 +0.1 -0.1 1.9 +0.2 -0.2 2.8 +0.2 -0.2 +0.2 -0.1 0-0.1 0.38 +0.1 -0.1 1.1 +0.2 -0.1 0.55 0.4 12 3 unit: mm sot-23-3 0.1 +0.05 -0.01 1.6 4008-318-123 sales@twtysemi.com 1 of 4 http://www.twtysemi.com smd type ic smd type mosfet rlml2502 k s m d t y p e d i p t y p e m o s f e t s m d t y p e d i p t y p e m o s f e t s m d ty p e i c s m d ty p e t r a n s i s t o r smd t ype smd type ic dip type smd type ic dip type product specification
smd type ic smd type electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v (br)dss i d = 250 a, v gs =0v 20 v i d =4.2a,v gs = 4.5v 0.035 0.045 i d =3.6a, v gs = 2.5v 0.050 0.080 gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 0.6 1.2 v forward transconductance g fs v ds =10v,i d = 4.0 a 5.8 s v ds =16v,v gs =0v 1.0 v ds =16v,v gs =0v,t j =70 25 gate-source forward leadage v gs =-12v -100 gate-source reverse leadage v gs =12v 100 input capacitance c iss v ds = 15 v, 740 output capacitance c oss v gs =0v, 90 reverse transfer capacitance c rss f= 1mhz 66 total gate charge q g 8.0 12 gate-source charge q gs 1.8 2.7 gate-drain charge q gd 1.7 2.6 turn-on delay time t d(on) i d =1a, 7.5 rise time t r v dd = 10v, 10 turn-off delay time t d(off) r d =10 54 fall time t r r g =6. 26 reverse recovery time * t rr 16 24 ns reverse recovery charge * q rr 8.6 13 nc continuous source current i s 1.3 pulsed source current i sm 33 diode forward voltage * v sd t j =25 ,v gs =0v,i s =1.3a 1.2 v * pulse width 300 s, duty cycle 2% static drain-source on-state resistance * r ds(on) v ds =5.0v,v gs =10v,i d =4.0a nc a i gss i dss gate-source leakage current na t j =25 ,i f =1.3a, di / dt = 100 a/ s ns pf a mosfet symbo l showing the integral reverse p-n junction diode mosfet 4008-318-123 sales@twtysemi.com 2 of 4 http://www.twtysemi.com smd type ic smd type mosfet rlml2502 k s m d t y p e d i p t y p e m o s f e t s m d t y p e d i p t y p e m o s f e t s m d ty p e i c s m d ty p e t r a n s i s t o r smd t ype smd type ic dip type smd type ic dip type product specification
smd type ic smd type mosfet fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 4.0a 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 7.00v 5.00v 4.50v 3.50v 3.00v 2.70v 2.50v 2.25v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.25v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 7.00v 5.00v 4.50v 3.50v 3.00v 2.70v 2.50v 2.25v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.25v 10 100 2.0 2.4 2.8 3.2 3.6 4.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 4 8 12 16 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.0a v = 10v ds 1 10 100 0 200 400 600 800 1000 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 4008-318-123 sales@twtysemi.com 3of 4 http://www.twtysemi.com smd type ic smd type mosfet rlml2502 k s m d t y p e d i p t y p e m o s f e t s m d t y p e d i p t y p e m o s f e t s m d ty p e i c s m d ty p e t r a n s i s t o r smd t ype smd type ic dip type smd type ic dip type product specification
smd type ic smd type mosfet fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum drain current vs. case temperature fig 9. on-resistance vs. drain current fig 10. on-resistance vs. gate voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs, gate -to -source voltage ( v ) 0.02 0.03 0.04 0.05 r d s ( o n ) , d r a i n - t o - s o u r c e v o l t a g e ( ? ) id = 4.0a 0 10203040 i d , drain current ( a ) 0.00 0.10 0.20 0.30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = 4.5v vgs = 2.5v fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) rlml2502 k 4008-318-123 sales@twtysemi.com 4 of 4 http://www.twtysemi.com s m d t y p e d i p t y p e m o s f e t s m d t y p e d i p t y p e m o s f e t s m d ty p e i c s m d ty p e t r a n s i s t o r smd t ype smd type ic dip type smd type ic dip type product specification
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